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| HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in Photo Coupler input resistor 330 Built-in over current protection circuit with soft shutdown characteristic Output terminals on over current detection The model name is indicated on the back of the product. Maximum Ratings Symbol VCC VOH VRB VFIN IF Ig1 Ig2 Item Supply Voltage Forward Bias Output Voltage Reverse Bias Supply Voltage Photo Coupler Input Voltage Photo Coupler Input Current Output Forward Current Output Reverse Current Switching Time-High side Switching Time-Low side Rise Time Fall Time Overcurrent trip level OCP delay time OCP rise and fall time Alarm output delay time Fault output current Common Mode Transient immunity Input Output Isolation Voltage Operational Ambient Temperature Storage Temperature AC50/60HZ 1minute 5k VFIN 5.0V PW 2 s Dutycycle 0.05 PW 2 s Dutycycle 0.05 VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V IF 10mA 02.0 11.5 09.0 VCC 26.0V VCC 26.0V Conditions Min. 23.0 15.4 07.0 Unless otherwise Tj 25 Ratings Typ. 26.0 17.5 08.0 05.0 10.0 04.0 04.0 Max. 28.0 18.0 10.0 07.0 11.5 06.0 06.0 01.5 01.5 01.0 01.0 12.0 04.0 05.0 01.0 10.0 10k AC3750 25 40 80 125 05.0 17.0 12.5 10.0 V V V V Unit mA A A s s s s V s s s mA V/ s V tPLH tPHL tr tf VOC tOCP tpcotf tALM IFO dv/dt Visc Topr Tstg Equivalent Circuit 69 GH-039 Example of Application 1 2 To assure required voltage the capacitor >10 F has to be connected as close to the Driver IC as possible. 3 For the value of gate resistor the resistance value described in IGBT Module specification is recommended. The gate resistance should be determined at less than 6A of peak output current judging from signal delay time and surge voltage. 4 For D1 use a fast diode with same blocking voltage as IGBT. Required current capacity is 0.1 to 1.0A, reverse recovery time has to be less than 0.4 s. 5 6 To prevent malfunction of detection for over current protection, apply resistor and diode with value around 100 Definition of over current protection function 70 |
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